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| MITSUBISHI IGBT MODULES CM100DU-12F HIGH POWER SWITCHING USE CM100DU-12F IC ................................................................... 100A VCES ............................................................ 600V Insulated Type 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tc measured point 94 7 17 80 0.25 23 23 2-6.5 MOUNTING HOLES 4 E2 G2 24 C2E1 E2 C1 18 G1E1 4 11 48 24 27 24 12 3-M5NUTS 12mm deep 16 2.5 25 2.5 16 13.5 E2 G2 E2 RTC TAB #110. t=0.5 7.5 C2E1 4 13 30 -0.5 +1 21.2 LABEL CIRCUIT DIAGRAM Feb. 2009 G1 E1 CM RTC C1 MITSUBISHI IGBT MODULES CM100DU-12F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Conditions G-E Short C-E Short TC = 25C Pulse TC = 25C Pulse TC = 25C Ratings 600 20 100 200 100 200 350 -40 ~ +150 -40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 Unit V V A A A A W C C Vrms N*m N*m g (Note 2) (Note 2) Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 10mA, VCE = 10V VGE = VGES, VCE = 0V IC = 100A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 100A, VGE = 15V VCC = 300V, IC = 100A VGE = 15V RG = 6.3, Inductive load IE = 100A IE = 100A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied*2 (1/2 module) Case temperature measured point is just under the chips Tj = 25C Tj = 125C Min. -- 5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.3 Limits Typ. -- 6 -- 1.6 1.6 -- -- -- 620 -- -- -- -- -- 1.9 -- -- -- 0.07 -- -- Max. 1 7 20 2.2 -- 27 1.8 1 -- 100 80 300 250 150 -- 2.6 0.35 0.70 -- 0.28*3 63 Unit mA V A V nF nF nF nC ns ns ns ns ns C V K/W K/W K/W K/W Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of = 0.9[W/(m * K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Feb. 2009 2 MITSUBISHI IGBT MODULES CM100DU-12F HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 200 Tj=25C VGE=20V 160 9.5 15 11 10 3 VGE = 15V 2.5 2 1.5 1 0.5 0 Tj = 25C Tj = 125C 0 40 80 120 160 200 9 120 8.5 80 40 8 7.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 5 5 Tj = 25C EMITTER CURRENT IE (A) Tj = 25C 4 3 2 102 7 5 3 2 3 IC = 200A IC = 100A IC = 40A 2 101 7 5 3 2 1 0 6 8 10 12 14 16 18 20 100 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 td(off) tf 101 7 5 3 2 SWITCHING TIMES (ns) Cies 102 7 5 3 2 td(on) Conditions: VCC = 300V VGE = 15V RG = 6.3 Tj = 125C 100 7 5 3 2 101 7 5 3 2 Coes Cres VGE = 0V tr 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 0 10 2 3 5 7101 2 3 5 7102 2 3 5 7103 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM100DU-12F HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j-c) = 0.35K/W 3 FWDi part: 2 Per unit base = Rth(j-c) = 0.70K/W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) 102 3 2 trr Irr NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) 7 5 101 7 5 3 2 Conditions: VCC = 300V VGE = 15V RG = 6.3 Tj = 25C 2 3 5 7 101 2 3 5 7 102 10-1 10-1 7 5 3 2 7 5 3 2 10-2 10-2 Single Pulse TC = 25C 100 0 10 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s) EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) 18 16 14 12 10 8 6 4 2 0 IC = 100A VCC = 200V VCC = 300V 0 100 300 500 700 900 GATE CHARGE QG (nC) Feb. 2009 4 |
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